STP11NM60FD datasheet(3/17 Pages) STMICROELECTRONICS

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STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP

Electrical ratings

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Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/

D²PAK/I²PAK

TO-220FP

VDS

Drain-source voltage (vgs = 0)

600

VDGR

Drain-gate voltage (RGS = 20 kΩ)

600

VGS

Gate- source voltage

±30

Drain current (continuos) at TC = 25°C

11 (1)

Limited only by maximum temperature allowed

Drain current (continuos) at TC = 100°C

7 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

44 (1)

PTOT

Total dissipation at TC = 25°C

160

Derating factor

0.88

0.28

W/°C

dv/dt (3)

ISD<11A, di/dt<400A/µs, VDD= 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation winthstand voltage (dc)

2500

Tstg

Storage temperature

–65 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

TO-220

D²PAK/I²PAK

TO-220FP

Rthj-case Thermal resistance junction-case Max

0.78

3.57

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

5.5

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 35V)

350

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