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SM4T33CAY Datasheet(PDF) 4 Page - STMicroelectronics |
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SM4T33CAY Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() 1.1 Characteristics (curves) Figure 3. Maximum peak power dissipation versus initial junction temperature 0 100 200 300 400 500 0 25 50 75 100 125 150 175 PPP (W) Tj (°C) 10/1000 µs Figure 4. Maximum peak pulse power versus exponential pulse duration 0.1 1 10 0.01 0.1 1 10 P PP (kW) Tj initial = 25 °C t (ms) p Figure 5. Maximum peak pulse current versus clamping voltage 0.1 1 10 100 1000 1 10 100 1000 IPP (A) VCL (V) 8/20 µs 10/1000 µs Figure 6. Dynamic resistance versus pulse duration 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 RD (Ω) t p(ms) SM4T6V7AY/CAY SM4T30AY/CAY SM4T82AY/CAY Figure 7. Junction capacitance versus reverse applied voltage (unidirectional type) 10 100 1000 10000 1 10 100 1000 C (pF) SM4T6V7AY SM4T30AY f = 1 MHz Vosc = 30 mVRMS Tj = 25 °C SM4T82AY VR (V) Figure 8. Junction capacitance versus applied voltage (bidirectional type) 10 100 1000 10000 1 10 100 1000 C (pF) SM4T6V7AY SM4T30AY f = 1 MHz Vosc = 30 mVRMS Tj = 25 °C SM4T82AY VR (V) SM4TxxAY, SM4TxxCAY Characteristics (curves) DS6927 - Rev 5 page 4/14 |
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