STP80N340K6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STP80N340K6

Description	N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

ISD = 12 A, VGS = 0 V

1.5

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

305

Qrr

Reverse recovery charge

4.3

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

453

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STP80N340K6

Electrical characteristics

DS14083 - Rev 1

page 4/13

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