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STG50M120F3D7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STG50M120F3D7 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() 2 Electrical ratings TJ = 25 °C unless otherwise specified. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 1200 V VGE Gate-emitter voltage ±20 V ICN(1) Continuous collector current at T = 100 °C 50 A ICP(1)(2) Pulsed collector current 200 A tSC(3) Short circuit withstand time (VCC = 600 V, VGE = 15 V, VCE (peak) ≤ 1200 V, TJstart ≤ 150 °C) 10 µs TJ Operating junction temperature range -55 to 175 °C 1. Nominal collector current for die packaged in ST discrete solution. Current level depends on the assembly thermal properties and is limited by maximum junction temperature. 2. Pulse width is limited by maximum junction temperature. 3. Evaluated by design/characterization, not tested in production. STG50M120F3D7 Electrical ratings DS13802 - Rev 2 page 3/10 |
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