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STG50M120F3D7 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STG50M120F3D7
Description  Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STG50M120F3D7 Datasheet(HTML) 3 Page - STMicroelectronics

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2
Electrical ratings
TJ = 25 °C unless otherwise specified.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
1200
V
VGE
Gate-emitter voltage
±20
V
ICN(1)
Continuous collector current at T = 100 °C
50
A
ICP(1)(2) Pulsed collector current
200
A
tSC(3)
Short circuit withstand time (VCC = 600 V, VGE = 15 V, VCE (peak) ≤ 1200 V, TJstart ≤ 150 °C)
10
µs
TJ
Operating junction temperature range
-55 to 175
°C
1. Nominal collector current for die packaged in ST discrete solution. Current level depends on the assembly thermal
properties and is limited by maximum junction temperature.
2. Pulse width is limited by maximum junction temperature.
3. Evaluated by design/characterization, not tested in production.
STG50M120F3D7
Electrical ratings
DS13802 - Rev 2
page 3/10



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