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STG50M120F3D7 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STG50M120F3D7
Description  Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STG50M120F3D7 Datasheet(HTML) 4 Page - STMicroelectronics

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3
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 3. Static characteristics (tested on wafer unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown voltage
IC = 2 mA, VGE = 0 V
1200
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15 V, IC = 15 A
1.7
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 2 mA
5
6
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 1200 V
25
µA
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Electrical characteristics (evaluated by design/characterization, not tested in production)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector-emitter saturation voltage
VGE = 15 V, IC = 50 A
-
1.7
2.2
V
VGE = 15 V, IC = 50 A, TJ = 175 °C
-
2.1
Cies
Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
-
3152
pF
Coes
Output capacitance
-
310
pF
Cres
Reverse transfer capacitance
-
123
pF
Qg
Total gate charge
VCC = 960 V, IC = 50 A, VGE = 0 to 15 V
-
194
nC
Table 5. Switching characteristics on inductive load
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 600 V, IC = 50 A,
VGE = 15 V, RG = 10 Ω
-
38
-
ns
tr
Current rise time
-
16
-
ns
td(off)
Turn-off-delay time
-
258
-
ns
tf
Current fall time
-
142
-
ns
Eoff (1)
Turn-off switching energy
-
3.2
-
mJ
td(on)
Turn-on delay time
VCC = 600 V, IC = 50 A,
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
-
36
-
ns
tr
Current rise time
-
18
-
ns
td(off)
Turn-off-delay time
-
296
-
ns
tf
Current fall time
-
311
-
ns
Eoff (1)
Turn-off switching energy
-
5.4
-
mJ
1. Including the tail of the collector current.
Note:
The aforementioned values are not tested at chip level and are strongly dependent on the package/module
design and the mounting technology. Refer to STGYA50M120DF3 datasheet for further information.
STG50M120F3D7
Electrical characteristics
DS13802 - Rev 2
page 4/10



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