Nexperia

PBLS4002Y

40 V, 500 mA PNP loadswitch transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1: PNP low VCEsat transistor

VCBO

collector-base voltage

open emitter

-

-40

V

VCEO

collector-emitter voltage open base

-

-40

V

VEBO

emitter-base voltage

open collector

-

-6

V

IClim

limiting collector current

-

-500

mA

ICM

peak collector current

tp ≤ 1 ms; single pulse

-

-1

mA

IB

base current

-

-50

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

-100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

200

mW

TR2: NPN resistor-equipped transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

input voltage TR2 positive

-

30

V

VI

input voltage

input voltage TR2 negative

-

-10

V

IO

output current

-

100

mA

ICM

peak collector current

tp ≤ 1 ms; single pulse

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

200

mW

Per device

Ptot

total power dissipation

-

300

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

416

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBLS4002Y

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 January 2023

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