STPSC20H12CWY datasheet(4/10 Pages) STMICROELECTRONICS

Part #	STPSC20H12CWY

Description	20 A 1200 V power Schottky silicon carbide diode

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 10 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

= 500 µs

Pulse test :

VF(V)

IF(A)

°C

= 25

= 150 °C

°C

= -40

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

IR(µA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 200 300 400 500 600 700 800 900 1000 1100 1200

VR(V)

Tj = 150 °C

Tj = 25 °C

Figure 3. Peak forward current versus case temperature

(per diode)

100

125

150

175

IM(A)

δ = 0.1

δ = 0.3

δ = 1

δ = 0.7

TC(°C)

δ = 0.5

δ = tp/T

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

200

300

400

500

600

700

0.1

1.0

10.0

100.0

1000.0

10000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

Cj(pF)

VR(V)

STPSC20H12CWY

Characteristics (curves)

DS12793 - Rev 2

page 4/10

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