PDTC123T_SER_1

Product data sheet

Rev. 01 — 10 March 2006

4 of 10

Philips Semiconductors

PDTC123T series

NPN resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = open

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

5

V

IO

output current

-

100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT416

[1] -

150

mW

SOT346

[1] -

250

mW

SOT883

[2][3] -

250

mW

SOT54

[1] -

500

mW

SOT23

[1] -

250

mW

SOT323

[1] -

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2][3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W

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