PDTC123TM datasheet(5/10 Pages) NEXPERIA

5 / 10 page

PDTC123T_SER_1

Product data sheet

Rev. 01 — 10 March 2006

5 of 10

Philips Semiconductors

PDTC123T series

NPN resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = open

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

100

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB =0A

µA

VCE = 30 V; IB =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

100

hFE

DC current gain

VCE =5V; IC =20mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

bias resistor 1 (input)

1.54

2.2

2.86

Ω

collector capacitance

VCB =10V; IE =ie =0A;

f = 1 MHz

2.5

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

10−1

102

006aaa696

200

300

100

400

500

hFE

(1)

(2)

(3)

006aaa697

IC (mA)

10−1

102

10−1

VCEsat

(V)

10−2

(3)

(2)

(1)

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