1998 Jun 24

2

Philips Semiconductors

Product specification

Schottky barrier diodes

BAS81; BAS82; BAS83

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD

package

• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static discharges. This surface

mounted diode is encapsulated in a

hermetically sealed SOD80C glass

SMD package with tin-plated metal

discs at each end. It is suitable for

“automatic placement” and as such it

can withstand immersion soldering.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

handbook, halfpage

MAM190

ka

Cathode indicated by a grey band.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

BAS81

−

40

V

BAS82

−

50

V

BAS83

−

60

V

continuous forward current

−

30

mA

repetitive peak forward current

−

150

mA

non-repetitive peak forward current

−

500

mA

storage temperature

−65

+150

°C

junction temperature

−

125

°C