PBSS302PZ_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 20 November 2009

3 of 14

NXP Semiconductors

PBSS302PZ

20 V, 5.5 A PNP low VCEsat (BISS) transistor

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−20

V

VCEO

collector-emitter voltage

open base

-

−20

V

VEBO

emitter-base voltage

open collector

-

−5V

IC

collector current

-

−5.5

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−11

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -0.7

W

[2] -1.7

W

[3] -2

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

006aaa560

Tamb (°C)

−75

175

125

25

75

−25

1.0

0.5

1.5

2.0

2.5

Ptot

(W)

0

(3)

(2)

(1)