1.

Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS302NZ.

1.2 Features

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

High collector current gain (hFE) at high IC

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

MOSFET gate driving

Motor control

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

PBSS302PZ

20 V, 5.5 A PNP low VCEsat (BISS) transistor

Rev. 02 — 20 November 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

-

−20

V

IC

collector current

-

-

−5.5

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

--

−11

A

RCEsat

collector-emitter

saturation resistance

IC = −4A;

IB = −200 mA

[1] -35

50

m

Ω