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BC856W-Q Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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BC856W-Q Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 13 page ![]() Nexperia BC856W-Q; BC857W-Q; BC858W-Q 65 V, 100 mA PNP general-purpose transistors 9. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 625 K/W [1] Device mounted on an FR4 PCB; single-sided; 35 µm copper; tin-plated and standard footprint. aaa-028969 10-5 10 10-2 10-4 102 10-1 tp (s) 10-3 103 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 1 FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC856W-Q_BC857W-Q_BC858W-Q All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. All rights reserved Product data sheet Rev. 1 — 24 June 2021 4 / 13 |
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