Nexperia

BC856W-Q; BC857W-Q; BC858W-Q

65 V, 100 mA PNP general-purpose transistors

aaa-028118

200

400

600

hFE

0

IC (mA)

-10-1

-103

-102

-1

-10

(1)

(3)

(2)

VCE = -5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 6. BC857BW-Q: DC current gain as a function of

collector current; typical values

mgt716

0

- 1200

- 1000

- 800

- 600

- 400

- 200

- 10- 2

- 10- 1

- 1

- 10

- 102

- 103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 7. BC857BW-Q: Base-emitter voltage as a function

of collector current; typical values

mgt717

- 104

- 103

- 102

- 10

- 10- 1

- 1

- 10

- 102

- 103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 8. BC857BW-Q: Collector-emitter saturation

voltage as a function of collector current;

typical values

mgt718

- 10- 1

- 1

- 10

- 102

- 103

IC (mA)

0

- 1200

- 1000

- 800

- 600

- 400

- 200

VBEsat

(mV)

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 9. BC857BW-Q: Base-emitter saturation voltage as

a function of collector current; typical values

BC856W-Q_BC857W-Q_BC858W-Q

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 24 June 2021

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