Nexperia

PSMN025-100HS

N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

003aah027

0

1

2

3

4

5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

typ

min

ID = 1 mA; VDS = VGS

Fig. 10. Gate-source threshold voltage as a function of

junction temperature

003aak059

0

5

10

15

20

25

30

0

20

40

60

80

100

ID (A)

RDSon

RDSon

(mΩ)

(mΩ)

4 V

4 V

4.5 V

4.5 V

5 V

5 V

5.5 V

5.5 V

VGS = 10 V

VGS = 10 V

Tj = 25 °C; tp = 300 μs

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values

003aaj819

0

0.6

1.2

1.8

2.4

3

-60

0

60

120

180

Tj (°C)

a

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 13. Gate charge waveform definitions

PSMN025-100HS

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Product data sheet

26 September 2022

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