Nexperia

PSMN025-100HS

N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode FET1 and FET2

Qr

recovered charge

IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 50 V; Tj = 25 °C

-

62.2

-

nC

[1] Refer to application note AN10273 for further information

[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

S1

source1

2

G1

gate1

3

S2

source2

4

G2

gate2

5

D2

drain2

6

D2

drain2

7

D1

drain1

8

D1

drain1

3

2

1

4

6

7

8

5

LFPAK56D; Dual

LFPAK (SOT1205)

D1

mbk725

G1

S1

D1

D2

G2

S2

D2

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PSMN025-100HS

LFPAK56D;

Dual LFPAK

plastic, single ended surface mounted package

(LFPAK56D); 8 leads

SOT1205

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN025-100HS

25RS10H

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

100

V

VDGR

drain-gate voltage

RGS = 20 kΩ

-

100

V

VGS

gate-source voltage

DC; Tj ≤ 175 °C

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

68

W

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

29.5

A

ID

drain current

VGS = 10 V; Tmb = 100 °C; Fig. 2

-

22

A

PSMN025-100HS

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© Nexperia B.V. 2022. All rights reserved

Product data sheet

26 September 2022

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