© Nexperia B.V. 2017. All rights reserved

BAS16_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 6 — 24 September 2014

4 of 21

Nexperia

BAS16 series

High-speed switching diodes

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB with 60

m copper strip line.

[3]

Single diode loaded.

[4]

Soldering point of cathode tab.

[5]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[6]

Soldering points at pins 4, 5 and 6.

IF

forward current

BAS16

[1] -215

mA

BAS16H

BAS16L

[2] -215

mA

BAS16T

[1] -155

mA

BAS16VV

BAS16VY

[1][3] -200

mA

BAS16W

[1] -175

mA

BAS16J

BAS316

BAS516

[1] -250

mA

IFRM

repetitive peak forward

current

tp  0.5 ms;

 0.25

-500

mA

IFSM

non-repetitive peak forward

current

square wave;

Tj(init) = 25 °C

tp =1 s-

4

A

tp =1ms

-

1

A

tp =1s

-

0.5

A

Ptot

total power dissipation

BAS16

Tamb  25 C

[1] -250

mW

BAS16H

Tamb  25 C

[2] -380

mW

[5] -830

mW

BAS16J

Tamb  25 C

[5] -550

mW

BAS16L

Tamb  25 C

[2] -250

mW

BAS16T

Tsp  90 C

[1][4] -170

mW

BAS16VV

Tamb  25 C

[1][3] -180

mW

BAS16VY

Tsp  85 C

[1][3][6] -250

mW

BAS16W

Tamb  25 C

[1] -200

mW

BAS316

Tsp  90 C

[1][4] -400

mW

BAS516

Tsp  90 C

[1][4] -500

mW

Per device

Tj

junction temperature

-

150

C

Tamb

ambient temperature

65

+150

C

Tstg

storage temperature

65

+150

C

Table 6.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit