© Nexperia B.V. 2017. All rights reserved

BAS16_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 6 — 24 September 2014

6 of 21

Nexperia

BAS16 series

High-speed switching diodes

7.

Characteristics

[1]

Pulse test: tp  300 s;  0.02.

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

[1]

IF = 1 mA

-

-

715

mV

IF = 10 mA

-

-

855

mV

IF = 50 mA

--1

V

IF = 150 mA

--1.25

V

IR

reverse current

VR = 25 V

--30

nA

VR = 80 V

--0.5

A

VR =25V; Tj =150 C

--30

A

VR =80V; Tj =150 C

--50

A

Cd

diode capacitance

f = 1 MHz; VR =0 V

BAS16; BAS16H;

BAS16J; BAS16L;

BAS16T; BAS16VV;

BAS16VY; BAS16W;

BAS316

--1.5

pF

BAS516

-

-

1

pF

trr

reverse recovery time

IF =10mA; IR =10mA;

RL = 100 ;

IR(meas) =1 mA

--4

ns

VFR

forward recovery voltage IF =10mA; tr = 20 ns

--1.75

V