Nexperia

BAS321J

High-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

250

V

VR

reverse voltage

-

200

V

IF

forward current

[1]

-

250

mA

tp = 50 µs; Tj(init) = 25 °C; square wave

-

13

A

tp = 100 µs; Tj(init) = 25 °C; square wave

-

9

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; square wave

-

3

A

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25

-

625

mA

[1]

-

420

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

660

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

300

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

[2]

-

-

190

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[3]

-

-

40

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2.

[3] Soldering point of cathode tab.

BAS321J

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Product data sheet

23 March 2018

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