Nexperia

BAT854SW

40 V, 200 mA Schottky barrier dual diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

[1]

-

-

625

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 0.1 mA; Tamb = 25 °C

-

200

-

mV

IF = 1 mA; Tamb = 25 °C

-

260

-

mV

IF = 10 mA; Tamb = 25 °C

-

340

-

mV

IF = 30 mA; Tamb = 25 °C

-

-

420

mV

VF

forward voltage

IF = 100 mA; Tamb = 25 °C

-

-

550

mV

IR

reverse current

VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

0.5

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tamb = 25 °C

-

-

20

pF

mld546

1.2

0.8

0.4

0

(1)

(3)

VF (V)

IF

(mA)

103

102

10

1

10- 1

(2)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

mld547

40

20

10

0

VR (V)

IR

(µA)

30

103

102

10

1

10- 1

(1)

(2)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT854SW

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Product data sheet

4 January 2023

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