1999 Apr 19

3

Philips Semiconductors

Product specification

PNP medium power transistors

BCX51; BCX52; BCX53

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCX51

−−45

V

BCX52

−−60

V

BCX53

−−100

V

collector-emitter voltage

open base

BCX51

−−45

V

BCX52

−−60

V

BCX53

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−1.5

A

peak base current

−−200

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

94

K/W

thermal resistance from junction to soldering point note 1

14

K/W