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VB162KX Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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VB162KX Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 7 page ![]() TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 03 69 12 ID - Drain Current (A) VGS = 10 V 0 4 8 12 16 20 0123456 VDS = 50 V ID = 0.5 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.01 VSD - Source-to-Drain Voltage (V) 0.1 TJ = 150 °C TJ = 25 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 50 100 150 200 250 0 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 0.5 A TJ - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 10 ID = 0.5 A VGS - Gate-to-Source Voltage (V) www.VBsemi.com VB162KX 3 40 80 120 160 200 服务热线:400-655-8788 |
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