BFG520WSLASHX datasheet(9/16 Pages) PHILIPS

9 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG520W; BFG520W/X

Fig.16 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MLB824

0 o

0.2

0.6

0.4

0.8

1.0

45 o

90 o

135 o

180 o

45 o

90 o

135 o

0.2

0.5

0.2

unstable

region

F = 1.5 dB

F = 2 dB

F = 3 dB

min

opt

= 1.1 dB

0.2

0.5

stability

circle

f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo =50 Ω.

Fig.17 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MLB825

0 o

0.2

0.6

0.4

0.8

1.0

45 o

90 o

135 o

180 o

45 o

90 o

135 o

0.5

0.2

0.5

(1)

(2)

(5)

(6)

(7)

(8)

(3)

(4)

f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo =50 Ω.

(1)

Γopt; Fmin = 1.85 dB.

(2) F = 2 dB.

(3) F = 2.5 dB.

(4) F = 3 dB.

(5)

Γms;Gmax = 11.8 dB.

(6) G = 11 dB.

(7) G = 10 dB.

(8) G = 9 dB.

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