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BFG67W/XR Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFG67W/XR Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page  August 1995 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG67W BFG67W/X; BFG67W/XR FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. MARKING PINNING TYPE NUMBER CODE BFG67W V2 BFG67W/X V6 BFG67W/XR V7 PIN DESCRIPTION BFG67W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter BFG67W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter BFG67W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT343. fpage Top view MBK523 2 1 3 4 Fig.2 SOT343R. alfpage Top view MSB842 21 4 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC collector current (DC) −− 50 mA Ptot total power dissipation up to Ts =85 °C −− 500 mW hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb =25 °C − 7.5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C − 15.5 − dB F noise figure Γ s =Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz − 2.2 − dB |
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