August 1995

3

Philips Semiconductors

Product specification

NPN 8 GHz wideband transistor

BFG67W

BFG67W/X; BFG67W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

20

V

collector-emitter voltage

open base

−

10

V

emitter-base voltage

open collector

−

2.5

V

collector current (DC)

−

50

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

175

°C

Fig.3 Power derating curve.

handbook, halfpage

0

50

100

200

400

0

MBG248

150

T

( C)

o

s

Ptot

(mW)

600

200

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to soldering point

180

K/W