1997 Apr 22

3

Philips Semiconductors

Product specification

NPN switching transistor

BFX85

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

100

V

collector-emitter voltage

open base

−

60

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

1A

peak collector current

−

1A

peak base current

−

100

mA

total power dissipation

−

800

mW

−

5W

25

2.86

W

storage temperature

−65

+150

°C

junction temperature

−

175

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient in free air

200

K/W

thermal resistance from junction to case

35

K/W