BFX85 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BFX85

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =80V

−

250

IE = 0; VCB =80V; Tj = 100 °C

−

0.1

2.5

µA

IE = 0; VCB = 100 V

−

500

IE = 0; VCB = 100 V; Tj = 100 °C

−

0.5

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

250

IC = 0; VEB =5V; Tj = 100 °C

−

0.1

2.5

µA

IC = 0; VEB =6V

−

500

hFE

DC current gain

IC = 10 mA; VCE =10V

−

IC = 150 mA; VCE = 10 V

142

−

IC = 500 mA; VCE = 10 V

−

IC = 1 A; VCE = 10 V

−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB =1mA

−

150

200

IC = 150 mA; IB =15mA

−

150

350

IC = 500 mA; IB =50mA

−

0.35

IC = 1 A; IB = 100 mA

−

0.66

1.6

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB =1mA

−

0.69

1.2

IC = 150 mA; IB =15mA

−

0.92

1.3

IC = 500 mA; IB =50mA

−

1.15

1.5

IC = 1 A; IB = 100 mA

−

1.4

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

712

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz

185

−

MHz

Switching Times (between 10% and 90% levels) see Fig.2

ton

turn-on time

ICon = 150 mA; IBon =15mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

360

−

storage time

−

300

−

fall time

−

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