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2SCR586D3 Datasheet(PDF) 2 Page - Nanjing International Group Co |
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2SCR586D3 Datasheet(HTML) 2 Page - Nanjing International Group Co |
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2 / 7 page ![]() l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 5 A ICP*1 10 A Power dissipation PD*2 10 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 80 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 80 - - V Emitter-base breakdown voltage BVEBO IE = 100μA 6 - - V Collector cut-off current ICBO VCB = 80V - - 1 μA Emitter cut-off current IEBO VEB = 4V - - 1 μA Collector-emitter saturation voltage VCE(sat) *3 IC = 2A, IB = 100mA - 100 300 mV DC current gain hFE *3 VCE = 3V, IC = 500mA 120 - 390 - Transition frequency fT *3 VCE = 10V, IE = -500mA, f = 100MHz - 200 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 50 - pF Turn-On time ton IC = 2.5A, IB1 = 250mA, IB2 = -250mA, VCC ⋍ 10V, RL = 3.9Ω See test circuit - 45 - ns Storage time tstg - 700 - ns Fall time tf - 180 - ns *1 Pw=10ms Single Pulse *2 Tc=25℃ *3 Pulsed Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 2/7 |
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