TPCF8201

2003-11-10

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8201

Notebook PC Applications

Portable Equipment Applications

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

20

V

Gate-source voltage

±12

V

DC

(Note 1)

3

Drain current

Pulse

(Note 1)

12

A

Single-device operation

(Note 3a)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

1.12

Single-device operation

(Note 3a)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

0.33

W

Single pulse avalanche energy

(Note 4)

1.46

mJ

Avalanche current

1.5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.11

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),

please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

Marking (Note 6)

8

1

5

4

F4A

1

2

3

4

8

7

6

5