TPCF8201 datasheet(3/7 Pages) TOSHIBA

3 / 7 page

TPCF8201

2003-11-10

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V



±10

µA

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0 V



µA

V (BR) DSS

ID = 10 mA, VGS = 0 V



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = -12 V



Gate threshold voltage

Vth

VDS = 10 V, ID = 200 µA

0.5



1.2

RDS (ON)

VGS = 2.0 V, ID = 1.5 A



100

RDS (ON)

VGS = 2.5 V, ID = 1.5 A



Drain-source ON resistance

RDS (ON)

VGS = 4.5 V, ID = 1.5 A



Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 1.5 A

2.7

5.4



Input capacitance

Ciss



590



Reverse transfer capacitance

Crss



Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



Rise time



3.0



Turn-on time

ton



7.5



Fall time



4.4



Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 µs



Total gate charge

(gate-source plus gate-drain)



7.5



Gate-source charge1

Qgs1



1.3



Gate-drain (“miller”) charge

Qgd

VDD ∼− 16 V, VGS = 5 V,

ID = 3.0 A



2.1



Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP



Forward voltage (diode)

VDSF

IDR = 3.0 A, VGS = 0 V



-1.2

VDD ∼− 10 V

0 V

VGS

5 V

ID = 1.5 A

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