NJ7002KDM datasheet(2/5 Pages) DGNJDZ

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Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

VDS

VGS = 0V, ID =250µA

Gate Threshold Voltage*

VGS(th)

VDS =VGS, ID =1mA

1.3

2.5

Zero Gate Voltage Drain Current

IDSS

VDS =48V,VGS = 0V

µA

IGSS1

VGS =±20V, VDS = 0V

±10

µA

Gate –Source leakage current

VGS = 4.5V, ID =200mA

1.1

Ω

Drain-Source On-Resistance*

RDS(on)

VGS =10V,ID =500mA

0.9

2.5

Ω

Diode Forward Voltage

VSD

VGS=0V, IS=300mA

1.5

Recovered charge

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µ

Dynamic Characteristics**

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS =10V,VGS =0V,f =1MHz

Switching Characteristics**

Turn-On Delay Time

td(on)

Turn-Off Delay Time

td(off)

VGS=10V,VDD=50V,RG=50Ω,

RGS=50Ω, RL=250Ω

Reverse recovery Time

trr

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µ

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BVGSO

Igs=±1mA (Open Drain)

±21.5

±30

Notes :

*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

MOSFET ELECTRICAL CHARACTERISTICS

T =25

℃ unless otherwise specified

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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