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BLF145 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF145 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() September 1992 5 Philips Semiconductors Product specification HF power MOS transistor BLF145 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 1.5 A; VGS =10V. handbook, halfpage 040 RDS(on) ( Ω) Tj (°C) 80 160 0.8 0.6 0.2 0 0.4 120 MGP038 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 240 0 60 180 120 30 MGP039 C (pF) VDS (V) Cos Cis Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 10 20 010 Crs (pF) 20 VDS (V) 30 MRA900 |
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