BLF246 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1996 Oct 21

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF246

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =50mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

2.5

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 50 mA; VDS =10V

−

4.5

∆V

gate-source voltage difference of

matched pairs

ID = 50 mA; VDS =10V

−−

100

gfs

forward transconductance

ID = 2.5 A or 5 A; VDS = 10 V

4.2

−

RDSon

drain-source on-state resistance

ID = 5 A; VGS =10V

−

0.2

0.3

Ω

IDSX

on-state drain current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

225

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

180

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V; valid for Th = 25 to 70 °C.

handbook, halfpage

−6

−2

−4

MGG105

10−2

10−1

110

T.C.

(mV/K)

ID (A)

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

MGG106

VGS (V)

(A)

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