1996 Oct 10

2

Philips Semiconductors

Product specification

VHF linear power transistor

BLV33F

FEATURES

• Internally matched input for wideband operation and

high power gain

• Diffused emitter ballasting resistors for an optimum

temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Primarily intended for use in linear VHF amplifiers for

television transmitters and transposers.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a

1

All leads are isolated from the flange.

PINNING - SOT119A

PIN

SYMBOL

DESCRIPTION

1

e

emitter

2

e

emitter

3

b

base

4

c

collector

5

e

emitter

6

e

emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM269

2

4

6

5

3

1

e

c

b

QUICK REFERENCE DATA

RF performance in a common emitter push-pull test circuit.

Notes

1. Three-tone test method (vision carrier

−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak sync level.

2. Television service (negative modulation, C.C.I.R. system).

MODE OF

OPERATION

(MHz)

(V)

(A)

(

°C)

(dB)

(W)

(dB)

sync in/sync out

(%)

CW, class-A

224.25

25

3.2

70

−55

>13

>13.5

25

−55

typ. 19

typ. 14.8

CW, class-AB

224.25

28

0.2

70

−

typ. 85

typ. 10.5

30/25

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.