ZXMP6A17DN8TC datasheet(4/7 Pages) ZETEX

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ZXMP6A17DN8

PROVISIONAL ISSUE A - SEPTEMBER 2002

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-60

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1.0

AVDS=-60V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-0.8

=-250 A, VDS=VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.125

0.190

VGS=-10V, ID=-2.2A

VGS=-4.5V, ID=-1.8A

Forward Transconductance (1)(3)

gfs

4.9

VDS=-15V,ID=-2.2A

DYNAMIC (3)

Input Capacitance

Ciss

670

VDS=-30 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

46.7

Reverse Transfer Capacitance

Crss

28.0

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

1.9

VDD =-30V, ID=-1A

RG(6.0Ω,VGS=-10V

Rise Time

22.4

Turn-Off Delay Time

td(off)

20.0

Fall Time

16.0

Gate Charge

7.3

VDS=-30V,VGS=-5V,

ID=-2.2A

Total Gate Charge

15.1

VDS=-30V,VGS=-10V,

ID=-2.2A

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

1.9

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.85

-0.95

TJ=25°C, IS=-2A,

VGS=0V

Reverse Recovery Time (3)

trr

26.4

TJ=25°C, IF=-1.7A,

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Qrr

32.7

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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