NCE60P09AS datasheet(2/7 Pages) NCEPOWER

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Wuxi NCE Power Co., Ltd

Page

V1.0

NCE60P09AS

http://www.ncepower.com

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-60

Zero Gate Voltage Drain Current

IDSS

VDS=-60V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.0

-1.75

-2.5

VGS=-10V, ID=-9A

30.5

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-9A

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-9A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

1919.7

Output Capacitance

Coss

124.3

Reverse Transfer Capacitance

Crss

VDS=-30V,VGS=0V,

F=1.0MHz

96.9

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-30V,ID=-9A

VGS=-10V,RGEN=3Ω

Total Gate Charge

36.5

Gate-Source Charge

Qgs

6.9

Gate-Drain Charge

Qgd

VDS=-30V,ID=-9A,

VGS=-10V

8.2

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-9A

1.2

Diode Forward Current

(Note 2)

-9

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = -9A

di/dt = 100A/μs

(Note3)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

EAS condition：Tj=25℃,VDD=-30V,VG=-10V,L=0.5mH,Rg=25Ω

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