1995 Apr 11

3

Philips Semiconductors

Product specification

UHF power transistor

BLV910

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

70

V

collector-emitter voltage

open base

−

30

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

1.5

A

average collector current

−

1.5

A

total power dissipation

−

30

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

mounting base

5.85

K/W

thermal resistance from mounting

base to heatsink

0.4

K/W

Fig.2 DC SOAR.

handbook, halfpage

10

1

10

110

10

I C

(A)

V

CE

(V)

(1)

MLC658

2

1

(2)

Fig.3 Power derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

10

20

30

40

0

20

40

60

80

100

120

140

T ( C)

o

h

P

tot

(W)

(2)

MLC659

(1)