BLW32 datasheet(3/12 Pages) PHILIPS

3 / 12 page

August 1986

Philips Semiconductors

Product speciﬁcation

UHF linear power transistor

BLW32

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); VBE =0

VCESM

max.

50 V

open base

VCEO

max.

30 V

Emitter-base voltage (open collector)

VEBO

max.

4 V

Collector current

d.c. or average

max.

650 mA

(peak value); f

> 1 MHz

ICM

max.

1000 mA

Total power dissipation up to Tmb =25 °CPtot

max.

10,8 W

Storage temperature

Tstg

−65 to +150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

(1) Second breakdown limit (independent of temperature).

handbook, halfpage

MGP429

10−1

102

VCE (V)

(A)

Tmb = 25 °C

Th = 70 °C

(1)

Fig.3 Power derating curve vs. temperature.

handbook, halfpage

100

MGP430

Th (°C)

Ptot

(W)

THERMAL RESISTANCE (see Fig.4)

From junction to mounting base

(dissipation = 3,75 W; Tmb = 72,3 °C; i.e. Th =70 °C)

Rth j-mb

15,0 K/W

From mounting base to heatsink

Rth mb-h

0,6 K/W

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