MMVL2105T1G datasheet(2/4 Pages) ONSEMI

2 / 4 page

MMVL2105T1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mAdc)

V(BR)R

−

Vdc

Reverse Voltage Leakage Current

(VR = 25 Vdc, TA = 25°C)

−

0.1

mAdc

Diode Capacitance Temperature Coefficient

(VR = 4.0 Vdc, f = 1.0 MHz)

TCC

−

280

−

ppm/

°C

CT, Diode Capacitance

VR = 4.0 Vdc, f = 1.0 MHz

Q, Figure of Merit

VR = 4.0 Vdc,

f = 50 MHz

TR, Tuning Ratio

C2/C30

f = 1.0 MHz

Device

Min

Nom

Max

Typ

Min

Typ

Max

MMVL2105T1

13.5

16.5

400

2.5

2.9

3.2

PARAMETER TEST METHODS

1. CT, DIODE CAPACITANCE

(CT = CC + CJ). CT is measured at 1.0 MHz using a

capacitance bridge (Boonton Electronics Model 75A or

equivalent).

2. TR, TUNING RATIO

TR is the ratio of CT measured at 2.0 Vdc divided by CT

measured at 30 Vdc.

3. Q, FIGURE OF MERIT

Q is calculated by taking the G and C readings of an

admittance bridge at the specified frequency and

substituting in the following equations:

+ 2pfC

(Boonton Electronics Model 33AS8 or equivalent). Use

Lead Length

[ 1/16”.

4. TCC, DIODE CAPACITANCE TEMPERATURE

COEFFICIENT

TCC is guaranteed by comparing CT at VR = 4.0 Vdc,

f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc,

f = 1.0 MHz, TA = +85°C in the following equation,

which defines TCC:

TCC +

CT() 85°C) – CT(–65°C)

) 65

106

CT(25°C)

Accuracy limited by measurement of CT to ±0.1 pF.

MMVL2105T1G Datasheet(PDF) 2 Page - ON Semiconductor

MMVL2105T1G Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

Datasheet Download

Link URL