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MMVL2105T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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MMVL2105T1G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 4 page ![]() MMVL2105T1 http://onsemi.com 3 TYPICAL DEVICE CHARACTERISTICS Figure 1. Diode Capacitance versus Reverse Voltage Figure 2. Normalized Diode Capacitance versus Junction Temperature Figure 3. Reverse Current versus Reverse Bias Voltage Figure 4. Figure of Merit versus Reverse Voltage VR, REVERSE VOLTAGE (VOLTS) 1.0 2.0 0.2 10 30 20 1.0 2.0 5.0 10 1000 50 20 100 500 5.0 0.5 0.1 200 TA = 25°C f = 1.0 MHz 1.040 1.030 1.020 1.010 1.000 0.990 0.980 TJ, JUNCTION TEMPERATURE (°C) +125 −75 −25 0 +25 +50 −50 +75 +100 0.970 0.960 VR = 2.0 Vdc VR = 4.0 Vdc VR = 30 Vdc 100 50 20 10 5.0 0.01 VR, REVERSE VOLTAGE (VOLTS) 5.0 10 20 15 25 30 0.02 0.05 0.10 0.20 0.50 1.0 2.0 TA = 125°C TA = 75°C TA = 25°C 1000 10,000 0.1 10 1.0 VR, REVERSE VOLTAGE (VOLTS) 1000 100 f, FREQUENCY (MHz) 10 100 10 1000 TA = 25°C f = 50 MHz TA = 25°C VR = 4.0 Vdc Figure 5. Figure of Merit versus Frequency 3.0 0.3 0 100 100 NORMALIZED TO CT at TA = 25°C VR = (CURVE) |
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