Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

diodes in a two terminal, surface

mounting, plastic envelope. These

V

(BO)

Breakover voltage

devices feature controlled breakover

BRS212-140

-

140

-

V

voltage and high holding current

BRS212-160

-

160

-

V

together with high peak current

BRS212-180

-

180

-

V

handling capability. Their intended

BRS212-200

-

200

-

V

application is protection of line based

BRS212-220

-

220

-

V

telecommunications

equipment

BRS212-240

-

240

-

V

against voltage transients.

BRS212-260

-

260

-

V

BRS212-280

-

280

-

V

I

H

Holding current

150

-

-

mA

I

PP

Non-repetitive peak pulse

-

-

40

A

current (CCITT K17)

OUTLINE - SOD106

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

D

Continuous voltage

BRS212-140

-

105

V

BRS212-160

-

120

V

BRS212-180

-

135

V

BRS212-200

-

150

V

BRS212-220

-

165

V

BRS212-240

-

180

V

BRS212-260

-

195

V

BRS212-280

-

210

V

I

PP

Non-repetitive peak pulse

5/310

µs impulse equivalent to

-

40

A

current

10/700

µs, 1.6 kV voltage impulse

(CCITT K17)

I

TSM

Non repetitive surge peak

half sine wave; t = 10 ms;

-

15

A

on-state current

T

I

t

-

1.1

A

dI

Rate of rise of on-state current

t

-

50

A/

µs

after V

P

tot

Continuous dissipation on

T

-

4

W

infinite heatsink

P

TM

Peak dissipation

t

-

50

W

T

stg

Storage temperature

- 40

150

˚C

T

j

Operating junction temperature

-

150

˚C

T

L

Maximum terminal temperature soldering time = 10 s

-

260

˚C

for soldering

YM

212

XXX

XXX denotes voltage grade

date code

January 1997

1

Rev 1.000