BRS212-200 datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

Fig.1. Definition of breakover diode characteristics.

Fig.2. Test waveform for high voltage impulse (I

PP)

according to CCITT vol IX-Rec K17.

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; T

j = 70˚C

prior to surge.

Fig.4. Normalised avalanche breakdown voltage V

(BR)

and V

(BO) as a function of temperature.

Fig.5. On-state current as a function of on-state

voltage; t

p = 200 µs to avoid excessive dissipation.

Fig.6. Maximum off-state current as a function of

temperature.

V(BO)

current

voltage

Symbol

V(BR)

I(BR)

Symmetric BOD

-40

-20

100

Tj / C

V(BR)(Tj)

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

V(BR)(25 C)

100%

90%

50%

30%

5us

310us

time

current

123

Tj = 25 C

Tj = 150 C

IT / A

VT / V

typ

max

100

1000

10000

BR211

Number of impulses

ITSM / A

ITSM

time

-40

-20

100

Tj / C

ID / uA

0.1

100

max

January 1997

Rev 1.000

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