3

µµµµPA832TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector cutoff current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC current gain

hFE

VCE = 3 V, IC = 10 mA

Note 1

75

150

Gain bandwidth product

fT

VCE = 3 V, IC = 10 mA, f = 2 GHz

12

GHz

Feedback capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHz

Note 2

0.4

0.7

pF

Insertion power gain

|S21e|2

VCE = 3 V, IC = 10 mA, f = 2 GHz

7

8.5

dB

Noise figure

NF

VCE = 3 V, IC = 3 mA, f = 2 GHz

1.5

2.5

dB

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

FB

Marking

V34

hFE value of Q1

100 to 145

hFE value of Q2

75 to 150