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BSP121 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BSP121
Description  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP121 Datasheet(HTML) 2 Page - NXP Semiconductors

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1998 Apr 01
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP121
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
designed for use as a line current
interrupter in telephone sets and for
application in relay, high-speed and
line-transformer drivers.
FEATURES
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown
QUICK REFERENCE DATA
PINNING - SOT223
Marking code
BSP121
Drain source voltage
VDS
max.
200 V
Gate-source voltage (open drain)
±VGSO
max.
20 V
Drain current (DC)
ID
max.
350 mA
Total power dissipation up to
Tamb =25 °CPtot
max.
1.5 W
Drain-source on-resistance
typ.
max.
4.5
6.0
Ω
Ω
ID = 400 mA; VGS = 10 V
RDS(on)
Transfer admittance
min.
typ.
200
350
mS
mS
ID = 400 mA; VDS = 25 V
 Yfs
1
= gate
2
= drain
3
= source
4
= drain
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
12
3
Top view
s
d
g



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