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ADL8141ACPZN-R7 Datasheet(PDF) 1 Page - Analog Devices |
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ADL8141ACPZN-R7 Datasheet(HTML) 1 Page - Analog Devices |
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1 / 22 page ![]() Data Sheet ADL8141 GaAs, pHEMT, MMIC, Low Noise Amplifier, 14 GHz to 24 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Low noise, high gain LNA for Ku and K band ► Frequency range: 14 GHz to 24 GHz ► Low noise figure: 1.4 dB typical at 15 GHz to 22 GHz ► High gain: 29 dB typical at 14 GHz to 15 GHz ► Integrated AC coupling capacitors ► Integrated bias inductor ► Single positive supply: 2 V with IDQ = 25 mA ► RBIAS drain current adjustment pin ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Ku band and K band satellite communications GENERAL DESCRIPTION The ADL8141 is a low power consumption, low noise amplifier that operates from 14 GHz to 24 GHz. Typical gain, noise figure, and output third-order intercept (OIP3) are 29 dB, 1.4 dB, and 18 dBm, respectively. Typical supply current is 25 mA from a 2 V supply. OIP3 and output power for 1 dB compression (OP1dB) can be increased by adjusting a supply-referenced resistor connected to the RBIAS pin. The RF input and output of the ADL8141 are internally matched and AC-coupled. The ADL8141 is fabricated on a gallium arsenide (GaAs), pseu- domorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) process. The ADL8141 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP and is specified for operation from −40°C to +85°C. FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram |
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