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Rev. 6, March 2023

C3D08065A

Package Types: TO-220-2

Marking: C3D08065A

Features

• Low Forward Voltage (V

F) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

Applications

• Industrial Switched Mode Power Supplies

• Uninterruptible & AUX Power Supplies

• Boost for PFC & DC-DC Stages

• Solar Inverters

Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Maximum Ratings (T

C = 25°C Unless Otherwise Specified)

Parameter

Symbol

Value

Unit

Test Conditions

Notes

Repetitive Peak Reverse Voltage

V

RRM

650

V

DC Blocking Voltage

V

DC

650

Continuous Forward Current

I

F

24

A

T

J = 25 °C

Fig. 3

11

T

J = 135 °C

8

T

J = 152 °C

Repetitive Peak Forward Surge

Current

I

FRM

37.5

T

C = 25 °C, tp = 10 ms, Half Sine Wave

25.5

T

C = 110 °C, tp = 10 ms, Half Sine Wave

Non-Repetitive Forward Surge

Current

I

FSM

71

T

C = 25 °C, tp = 10 ms, Half Sine Wave

Fig. 8

60

T

C = 110 °C,tp = 10 ms, Half Sine Wave

Non-Repetitive Peak Forward

Surge Current

I

F,Max

650

T

C = 25 °C, tp = 10 µs, Pulse

530

T

C = 110°C, tp = 10 µs, Pulse

Power Dissipation

P

tot

107

W

T

J = 25 °C

Fig. 4

46.5

T

J = 110 °C

3rd Generation 650 V, 8 A Silicon Carbide Schottky