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BSS110 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BSS110
Description  P-channel enhancement mode vertical D-MOS transistor
PDF  9 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSS110 Datasheet(HTML) 5 Page - NXP Semiconductors

  BSS110 Datasheet HTML 1Page - NXP Semiconductors BSS110 Datasheet HTML 2Page - NXP Semiconductors BSS110 Datasheet HTML 3Page - NXP Semiconductors BSS110 Datasheet HTML 4Page - NXP Semiconductors BSS110 Datasheet HTML 5Page - NXP Semiconductors BSS110 Datasheet HTML 6Page - NXP Semiconductors BSS110 Datasheet HTML 7Page - NXP Semiconductors BSS110 Datasheet HTML 8Page - NXP Semiconductors BSS110 Datasheet HTML 9Page - NXP Semiconductors  
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1995 Apr 07
5
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS110
Fig.6
Capacitance as a function of drain source
voltage; typical values.
VGS = 0.
Tj = 25 °C.
f = 1 MHz.
handbook, halfpage
0
80
60
40
20
0
10
20
30
MLD191
C
(pF)
V
(V)
DS
Crss
Coss
C iss
Fig.7 Typical output characteristics.
Tj = 25 °C.
handbook, halfpage
0
2
10
12
600
200
0
400
MLD197
4
6
8
V
(V)
DS
V
=
GS
10 V
7.5 V
6 V
5 V
4 V
3 V
2.5 V
I D
(mA)
Fig.8 Typical transfer characteristics.
VDS = −10 V.
Tj = 25 °C.
handbook, halfpage
0
2
4
10
600
200
0
400
MLD196
6
I D
(mA)
V
(V)
GS
8
Fig.9
Drain-source on-state resistance as a
function of drain current; typical values.
Tj = 25 °C.
handbook, halfpage
60
0
40
1
MLD198
10
102
10
3
20
I (mA)
RDSon
(
Ω)
D
V
=
GS
3 V
2.5 V
7.5 V
10 V
4 V
5 V



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