1997 Apr 23

2

Philips Semiconductors

Product specification

NPN medium power transistors

BSX45; BSX46; BSX47

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• General industrial applications.

DESCRIPTION

NPN medium power transistor in a TO-39 metal package.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage

3

1

2

MAM317

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-base voltage

open emitter

BSX45

−−

80

V

BSX46

−−

100

V

BSX47

−−

120

V

collector-emitter voltage

open base

BSX45

−−

40

V

BSX46

−−

60

V

BSX47

−−

80

V

peak collector current

−−

1.5

A

total power dissipation

−−

6.25

W

DC current gain

BSX45-10; BSX46-10; BSX47-10

63

100

160

BSX45-16; BSX46-16; BSX47-16

100

160

250

transition frequency

−−

MHz