1997 Apr 23

3

Philips Semiconductors

Product specification

NPN medium power transistors

BSX45; BSX46; BSX47

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSX45

−

80

V

BSX46

−

100

V

BSX47

−

120

V

collector-emitter voltage

open base

BSX45

−

40

V

BSX46

−

60

V

BSX47

−

80

V

emitter-base voltage

open collector

−

7V

collector current (DC)

−

1A

peak collector current

−

1.5

A

peak base current

−

200

mA

total power dissipation

−

6.25

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient in free air

200

K/W

thermal resistance from junction to case

28

K/W