 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
LT1055AMH Datasheet(PDF) 3 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LT1055AMH Datasheet(HTML) 3 Page - Linear Technology |
|
|
3 / 12 page  3 LT1055/LT1056 LT1055AM LT1055M LT1056AM LT1056M SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage (Note1) LT1055 q — 180 500 — 250 1200 µV LT1056 q — 180 550 — 250 1250 µV Average Temperature (Note 5) q — 1.3 4.0 — 1.8 8.0 µV/°C Coefficient of Input Offset Voltage IOS Input Offset Current Warmed Up LT1055 q — 0.20 1.2 — 0.25 1.8 nA TA = 125°C LT1056 q — 0.25 1.5 — 0.30 2.4 nA IB Input Bias Current Warmed Up LT1055 q — ±0.4 ±2.5 — ±0.5 ±4.0 nA TA = 125°C LT1056 q — ±0.5 ±3.0 — ±0.6 ±5.0 nA AVOL Large-Signal Voltage Gain VO = ±10V, RL = 2k q 40 120 — 35 120 — V/mV CMRR Common-Mode Rejection Ratio VCM = ±10.5V q 85 100 —8298 — dB PSRR Power Supply Rejection Ratio VS = ±10V to ±17V q 88 104 — 86 102 — dB VOUT Output Voltage Swing RL = 2k q ±12 ±12.9 — ±12 ±12.9 — V ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage (Note1) LT1055 H Package q — 100 330 — 140 750 µV LT1056 H Package q — 100 360 — 140 800 µV LT1055 N8 Package q — — — — 250 1250 µV LT1056 N8 Package q — — — — 280 1350 µV Average Temperature H Package (Note 5) q — 1.2 4.0 — 1.6 8.0 µV/°C Coefficient of Input Offset N8 Package (Note 5) q — — — — 3.0 12.0 µV/°C Voltage IOS Input Offset Current Warmed Up LT1055 q —10 50 — 1680 pA TA = 70°C LT1056 q — 14 70—18 100 pA IB Input Bias Current Warmed Up LT1055 q — ±30 ±150 — ±40 ±200 pA TA = 70°C LT1056 q — ±40 ±80 — ±50 ±240 pA AVOL Large-Signal Voltage Gain VO = ±10V, RL = 2k q 80 250 — 60 250 — V/mV CMRR Common-Mode Rejection Ratio VCm = ±10.5V q 85 100 —8298 — dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V q 89 105 — 87 103 — dB VOUT Output Voltage Swing RL = 2k q ±12 ±13.1 — ±12 ±13.1 — V LT1055AC LT1056AC VS = ±15V, VCM = 0V, –55°C ≤ TA ≤ 125°C unless otherwise noted. The q denotes specifications which apply over the full operating temperature range. For MIL-STD components, please refer to LTC883 data sheet for test listing and parameters. Note 1: Offset voltage is measured under two different conditions: (a) approximately 0.5 seconds after application of power; (b) at TA = 25°C only, with the chip heated to approximately 38 °C for the LT1055 and to 45 °C for the LT1056, to account for chip temperature rise when the device is fully warmed up. Note 2: 10Hz noise voltage density is sample tested on every lot of A grades. Devices 100% tested at 10Hz are available on request. Note 3: This parameter is tested on a sample basis only. Note 4: Current noise is calculated from the formula: in = (2qlB) 1/2, where q = 1.6 × 10–19 coulomb. The noise of source resistors up to 1GΩ swamps the contribution of current noise. Note 5: Offset voltage drift with temperature is practically unchanged when the offset voltage is trimmed to zero with a 100k potentiometer between the balance terminals and the wiper tied to V+. Devices tested to tighter drift specifications are available on request. LT1055CH/LT1056CH LT1055CN8/LT1056CN8 VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C unless otherwise noted. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
